Device Engineering Intern, SiGe BiCMOS Development (Summer 2026)

About GlobalFoundries

GlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.
 

Internship Program Overview:

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you’ll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.
 

Summary of Role:

We are seeking highly motivated students with interest in semiconductor process and device development to work with the RF Technology Development team located in our 200mm manufacturing fab in Essex Junction, Vermont (FAB9).   Interns will be working with our project team including device and integration engineers in analyzing and developing new devices and process flow for SiGe BiCMOS technologies.

Essential Responsibilities include:

• Innovate with device, test, and process integration team members in defining, designing, and setting up electrical test structures, associated wafer measurements, and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield.
• Collaborate with the various device, process integration, and program management teams in our technology development team to simulate and/or characterize the technology as it is being developed to meet performance, reliability, yield, and cost objectives.
• Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
• Support technology development qualification milestones from conception through manufacturing installation. Collaborate with various technical teams to ensure appropriate electrical tests are available for any new devices or concerns. Perform electrical device simulation and characterization, and drive analysis and team to meet best in class device performance. Includes DC/AC and RF test and analysis of discrete electrical devices like HBTs, CMOS, resistors, caps etc
   

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
   

Required Qualifications:

• Education – Actively pursuing a Ph. D. in Electrical Engineering, Solid State Physics, Microelectronics, or related field through an accredited degree program during the time of internship.
• A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on Bipolar transistors
• Experience with device characterization – DC I-V, C-V measurements, RF s-paramaters
• Must have at least an overall 3.0 GPA and be in good academic standing.
• Language Fluency - English (Written & Verbal)
• Ability to work at least 40 hours per week on site (Fab9, Essex Junction, VT) during the internship.
   

Preferred Qualifications:

• Prior related internship or co-op experience
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
• Educational experience in device physics (FET, BJT, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
• Research experience in SiGe or InP HBT design or characterization
• RF characterization experience – s-parameters, loadpull and noise figure
• Simulation and design layout experience using Cadence or related software
• Experience with data analysis tools and scripts like JMP, R, Python etc
• Experience in semiconductor processing in CMOS or SiGe technologies for RF
• Strong written and verbal communication skills
• Strong planning & organizational skills

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Expected Salary Range

$20.00 - $40.00

Expected Salary Range

$0.00 - $0.00

The exact Salary will be determined based on qualifications, experience and location.